Description
808nm Horizontal Diode Laser Array
Main Features:
- 808nm near-infrared band paired with 80W QCW output
- 4-bar array achieves uniform beam profile and high energy concentration
- 1Hz repetition frequency, matched with optimized pulse control algorithm
Application:
- Solid-State Pumping: Pump source for Nd-doped and Yb-doped solid-state lasers, high-energy for laser welding and drilling, precision gem cutting.
- Material Surface Modification: Suitable for large-area metal surface hardening, ceramic material sintering and composite material modification.
- Scientific Experiment & Detection: Ideal for laser-induced breakdown spectroscopy (LIBS) and plasma physics research.
Specifications:
Item No.:WC808HA80
|
Optical |
Typical Value |
|
Center Wavelength λ |
808nm |
|
Wavelength Tolerance |
±5nm |
|
Working Mode |
QCW |
|
Output Power |
80W |
|
Number of Bars |
4 |
|
Fast Axis Divergence FWHM |
38 Degree |
|
Slow Axis Divergence FWHM |
12 Degree |
|
Pulse Width |
<200ms |
| Frequency | 1Hz |
|
Electrical |
|
|
Operating Current Iop |
25A |
|
Threshold Current Ith |
8A |
|
Operating Voltage Vop |
7V |
|
Thermal |
|
|
Test Temperature |
25°C |
|
Storage Temperature |
0-55℃ |
Detailed Drawing:
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