BrandNew has always insisted on independent research and development and production of high-power laser chips. The 9XXnm 15W, 20W, and 25W single-tube chips that have been launched successively have been tested in the industrial market for many years and have been widely trusted and recognized by the market.
In order to meet market demand and improve the output power and price-to-power ratio of the laser pump source, BrandNew has launched a new 9XXnm 28W semiconductor laser chip, which has been greatly improved in terms of performance and reliability.
01 Performance indicators have reached the international advanced level
Improve power and efficiency
The output power and efficiency of semiconductor lasers are mainly affected by factors such as laser threshold, slope and high current power rollover. BrandNew has effectively avoided high current rollover and improved photoelectric conversion efficiency by optimizing the epitaxial structure design.
1. to raise efficiency
Usually by reducing the doping concentration of the PN junction to lower the threshold and increase the slope, a too low doping concentration will increase the resistance of the PN junction and increase the chip voltage. In order to solve the problem of optimal balance of threshold, slope and voltage, we optimized the asymmetric large optical cavity structure wave, increased the thickness of the waveguide layer, and carefully designed the distribution of doping concentration in different regions of the PN junction to reduce the optical field and high doping. The overlap of free carriers in the impurity confinement layer reduces the absorption loss to ensure that the voltage remains basically unchanged when the threshold is lowered and the slope efficiency is improved, thereby improving the chip efficiency.
2. Avoid high current rollover
The high current bending is mainly due to the decrease of internal quantum efficiency during high current injection. By optimizing the energy band structure of the material near the gain region of the laser structure, and improving the ability of the PN junction to inject electrons, the quantum efficiency of high current injection is enhanced, and the high current bending phenomenon is effectively avoided.
Improve beam quality, increase brightness
BrandNew uses anti-waveguide and microstructure modification engineering methods to increase the scattering loss of high-order modes, suppress high-order side modes, improve the beam quality of the laser chip, and increase the brightness. At present, the BrandNew single-tube chip achieves a 95% energy divergence angle of the slow axis 9 °, the brightness is greater than 80MW/cm2sr.
Through effective treatment and prevention of various influencing factors, BrandNew's self-developed single-tube chip has reached commercial power output of 28W, test power reached more than 30W, slow axis 95% energy divergence angle 9°, brightness greater than 80MW/cm2sr, and efficiency reached 65 %, a number of performance indicators have reached the international leading level.
02 High reliability to meet the needs of the industrial market
While pursuing higher output power and conversion efficiency, meeting the higher requirements of the industrial market for laser life is also the direction of our unremitting efforts.
Cavity surface processing technology is the key to determining the reliability and industrial application of high-power semiconductor laser chips. The increase in laser chip power is accompanied by the increase in the junction temperature of the chip and the optical power density of the cavity surface, which puts forward higher requirements for the damage resistance of the cavity surface. Based on years of accumulation of key technologies for special cavity surface treatment, BrandNew has improved the process level of independent research and development equipment, developed new cavity surface treatment technologies, improved the control quality level of cavity surface treatment, and improved the cavity surface’s ability to resist optical catastrophic damage. Ensure that the 28W high-power laser chip meets the requirements of the industrial market for the life of the laser.
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