The width of the 3W 808nm semiconductor laser chip is 150μm wide, the cavity length is 1mm, the photoelectric conversion efficiency is 60%, and the service life can reach more than 10000 hours.
The chip adopts new epitaxial structure design and material epitaxy, advanced non-pump window design and preparation technology, and wet and dry etching combined with self-aligned process technology to control the consistency of the strip width, especially to ensure high finished products in mass production To reduce the cost of laser chips.
At the same time, the adoption of new technology greatly improves the high temperature resistance characteristics, so that it can work continuously at an ambient temperature of 60 ℃ or higher.
The chip can be applied to C-MOUNT, TO56, TO3 and other packaging types.