High Power Conduction Cooled G-Stack Diode Laser Array

Nov 14, 2019

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Special design for military, pumping, illumination, and direct diode needs.

 Four models for different application. Wavelength is 808nm and 9XXnm.

15735432168920561


Optical

Center Wavelength λ

808nm±3nm   9xxnm±3nm   

Output Power per bar

100/200/300
100
Spectral Width FWHM≤4nm  ≤4nm  

Number of bars

1~36
1~36

Fast Axis Divergence(FWHM)

<40
<40

Slow Axis Divergence (FWHM)

<12
<12

Polarization Mode

TE
TE

Electrical

Operating Current Iop

100/200/300A100A

Threshold Current Ith

15/20/25A10A

Operating Voltage Vo

≤2V/bar

≤2V/bar

Power Conversion Efficiency

≥45%

≥45%

Thermal

Operating Temperature

-45~60℃

-45~60℃

Storage Temperature

-55~80℃

-55~80℃

Best Temperature

25℃

25℃



300W 940nm Laser Diode Stack for Military