The luminescence wavelength of semiconductor laser is 0 with temperature change. 2-0. 3 nm / ℃, spectrum width will increase, affect the color brilliance. In addition, when the forward current flows through the p-n junction, and make the junction area produces a febrile loss, temperature near the room temperature, temperature rise per 1 ℃, the luminous intensity of semiconductor laser will correspondingly reduced about 1%, encapsulation cooling; Maintaining color purity and luminescence intensity is very important. In the past, the driving current of most semiconductor lasers was reduced by reducing the junction temperature. The driving current of most semiconductor lasers was limited to about 20mA. However, the optical output of semiconductor lasers will increase with the increase of current. The driving current of many power semiconductor lasers can reach levels of 70mA, 100mA and even 1A. The packaging structure needs to be improved. For example, the large-area chip inversion structure is adopted, the silver adhesive with good thermal conductivity is selected, the surface area of the metal support is increased, and the silicon carrier of solder bump is directly installed in the heat sink method. In addition, the thermal design and thermal conductivity of PCB circuit board are also very important in the application design.
Semiconductor lasers drive current