VCSEL, that is, vertical-cavity surface-emitting laser, combines the advantages of high output power, high conversion efficiency, and high-quality beam. Compared with LED and edge-emitting laser EEL, it has the advantages of accuracy, Miniaturization, low power consumption, reliability and other aspects are superior in all aspects.
VCSEL devices have two basic structures. One is a top-emitting structure: it is grown on an n-type GaAs substrate using MOCVD technology, DBR is used as a laser cavity mirror, and the active region of the quantum well is sandwiched between n-DBR and p-DBR between. The other is the bottom emission structure, which is generally used to produce the 976-1064nm band. Usually the substrate is thinned to less than 150μm to reduce the absorption loss of the substrate, and then a layer of antireflection coating is grown to improve the quality of the laser beam. Finally, the gain chip Installed on the heat sink.
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