Silicon PIN Photodiode 400nm 1100nm

Silicon PIN Photodiode 400nm 1100nm

PD8TO411
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Description
product-753-502
 
 
Silicon PIN Photodiode 400nm 1100nm

Features:

  • Typically from 400 nm to 1100 nm, covering UV to near-infrared.
  • TO8package

Applications:

  • Optical Communication
  • Used in devices such as pulse oximeters.

Specification:

Item No.: PD8TO411

Item Name: Silicon PIN Photodiode 

 

Absolute Maximum Ratings

   

Operating Voltage

40 V
Saturated optical power

0.3

(W/cm2)

Max soldering Temp 260
Operating Temp -40~+100
Storage Temp -55~+125
Opto-Electronic Value(T=25℃)    
Spectrum Response Range 400~1100 nm
Active Diameter 8 mm
Peak response wavelength 930 nm
Reponsivity 0.63 A/W
Dark current 3 nA
Rise Time 20 ns
Junction Capacitance VR=15V f=1MHz 70 pF
Breakdown Voltage 25

 

Drawing:

 

product-659-334

 

BrandNewTech prides itself on the superior quality of its products and its unwavering commitment to customer success. A prime example of this is our range of industry-leading, ready-to-use photodiodes, designed to meet the needs of both OEMs and end users.

Our greatest strength lies in our ability to transform your ideas into reality and create high-quality photonic solutions tailored to your specific needs. If you have any special requests, please let us know, and we will strive to meet them at every stage of product design and production.

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