The key technologies of high-power semiconductor lasers include epitaxial growth technology of semiconductor laser chips, packaging and optical collimation of semiconductor laser chips, laser beam shaping technology and laser integration technology.
The epitaxial growth technology of semiconductor laser chips, the research and design of epitaxial chip structures play a vital role in the development of high-power semiconductor lasers, and therefore are the focus of research in high-power semiconductor laser technology.
In recent years, experts have strengthened their research investment in this technology and made significant progress.
Its recent research results are mainly reflected in the following aspects:
1 The use of the aluminum-free active area effectively increases the optical power density of the optical catastrophic damage of the laser chip end face, so that the output power and service life of the laser device are significantly improved;
2 Using the strained quantum well structure, the photoelectric performance of the high power semiconductor laser is effectively improved, the emission wavelength range of the GaAs-based material system is expanded, and the threshold current density of the device is reduced;
3 Large optical cavity structure design method using wide waveguide increases the beam size in near-field mode, which reduces the output laser power density of the device, increases the pumping and output power of the laser, and also makes the device life further increase.
Nowadays, the electro-optical conversion efficiency of commercialized semiconductor laser chips has reached 60%, and the electro-optical conversion efficiency of devices in the laboratory has reached more than 70%. It is believed that with the further improvement of its technology. In the near future, the electro-optical conversion efficiency of semiconductor laser chips will reach more than 85%.