Laser Diode Stacks: In a laser diode bar, the individual emitting areas (emitters) lie side by side, separated by the non-emitting areas. These sets of emitting/non-emitting regions form the so-called active layer. The number, the width, and the spacing of the emitters is manufacturer dependent. The relative value of the emitting areas in the active layer with respect to the bar width is the filling factor (FF). Typical filling factors are 30 – 90%. The center-to-center distance between two adjacent emitters is the emitter pitch. Z is the propagation axis of the laser radiation. The propagation axis Y is the fast axis (FA) and the X axis is the slow axis (SA), referring to the rate of divergence. Therefore, these axes comprise the beam angle (divergence) in the two planes, XZ and YZ.
Our laser diode stacks are multiple laser diode bars packaged in close proximity. Therefore, increasing the total output power in the smallest area possible. Multimode laser diode stacks can be actively cooled with Microchannel Cooling (MCC) or passively cooled depending on the waste heat requirements. We offer a wide range of wavelengths and output powers up to kw level.
We offer laser diode bar stacks in near infrared (NIR) wavelengths ranging from 808nm-980nm. These stacks have free-space output and collimation options for fast axis, slow axis, or both axes.


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