Vertical Stack Diode Laser Cutting is a high-tech developed in recent decades, with higher cutting accuracy, lower roughness, higher material utilization and productivity than traditional cutting processes, especially in fine Cutting areas, cutting with traditional cutting can not match the advantages. Cutting is the focus of energy to the tiny space, the use of high-density energy for non-contact, high-speed, high-precision cutting method. With the development of the cutting market, the Vertical Stack Diode Laser market is also rapidly renewing the rise, the following brief introduction to the Vertical Stack Diode Laser for the help of cutting the market.
The Vertical Stack Diode Laser looks functional, but with optimized micro optics, it is ideal for fast precision cutting of 6mm thick stainless steel. By further improving the beam shaping adjustment, the Vertical Stack Diode Laser (HPDL) is coupled with the industrial computer digital control machine tool machinery. Micro optics is used to connect high-energy Vertical Stack Diode Laser source modules. The high-energy Vertical Stack Diode Laser is then guided through the fiber to the cutting head.
The mechanism of production
Before talking about the mechanism, talk about stimulated radiation. There are three kinds of radiation processes in optical radiation,
The particles in the high energy state are transitioned to the low energy state under the excitation of the external light, which is called spontaneous emission.
Second, in the high energy state of the particles in the external light excitation to the low energy state transition, called the stimulated radiation;
Third, in the low energy state of the particles to absorb the energy of external light to the high energy state transition called stimulated absorption.
Spontaneous emission, even if the two simultaneously from a high energy state to low energy state transition particles, they issued the phase of light, polarization state, the direction of emission may also be different, but the stimulated radiation is different, when the high energy state in the particles Photon excited to the low energy state transition, issued in the frequency, phase, polarization state and other aspects of the same photon with the same light. In the device, the radiation is stimulated radiation, it issued in the frequency, phase,Vertical Stack Diode Laser polarization state and so exactly the same. Any stimulated light system, that is, stimulated radiation, but also stimulated absorption, only stimulated radiation dominant, in order to amplify the foreign light and issued. And the general light source are stimulated absorption dominant, only the equilibrium state of the particle is broken, so that the number of particles in the high energy state is larger than the number of particles in the low energy state (this is called the number of ions inversion).
The three conditions are: to achieve the number of particles inversion, to meet the threshold conditions and resonance conditions. The primary condition of the stimulated emission of light is that the number of particles is reversed, and in the semiconductor the electrons in the valence band are pumped to the conduction band. In order to obtain the number of ions inversion, usually using heavily doped P-type and N-type material to form PN junction,Vertical Stack Diode Laser so that under the action of external voltage, in the vicinity of the junction area appeared in the number of reversal - in the high Fermi level EFC The electrons are stored in the following conduction bands, and holes are stored in valence bands above the low Fermi level EFV. The realization of the number of particles inversion is a necessary condition, but not a sufficient condition. To produce, but also have a very small loss of the resonant cavity, the main part of the resonator is two parallel to the mirror, the activation of the material emitted by the stimulated radiation reflected back and forth between the two mirrors, continue to cause new Stimulated radiation, so that it is constantly being amplified. Only the stimulated radiation amplification gain is greater than the various losses within the device, that meet a certain threshold conditions.